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10-fy07zab050sm-l514b08 target datasheet copyright vincotech 1 14 aug. 2015 / revision 1 maximum ratings t j =25c, unless otherwise specified rectifier diode flow rpi 1 650 v / 50 a high integration level of rectifier, pfc and inve rter high efficiency input rectifier wide input voltage range rated pfc dual pfc with high efficiency, fast igbt h5 + ultrafast si diode high efficiency hbridge inverter with fast igbt h5 temperature sensor welding charger 10fy07zab050sml514b08/3/ flow 1 12mm housing schematic features target applications types parameter symbol value unit maximum junction temperature t jmax 150 c total power dissipation p tot t j = t jmax t s = 80c 86 w surge current capability i 2 t t p = 10 ms 50 hz sine 1200 a 2 s surge (nonrepetitive) forward current i fsm 50 hz single half sine wave t j = 150c 490 a continuous (direct) forward current i f t j = t jmax t s = 80c 50 a conditions peak repetitive reverse voltage v rrm 1600 v
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 2 14 aug. 2015 / revision 1 c. t. protection diode pfc diode pfc switch parameter symbol value unit maximum junction temperature t jmax 175 c 20 v total power dissipation p tot t j = t jmax t s =80 c 84 w gateemitter voltage v ges repetitive peak collector current i crm t p limited by t jmax 225 a a condition collectoremitter voltage v ces 650 v collector current i c t j = t jmax t s =80 c 50 parameter symbol value unit maximum junction temperature t jmax 175 c power dissipation p tot t j = t j max t s =80c 33 w repetitive peak forward current i frm 20 a dc forward current i f t j = t j max t s =80c 17 a conditions peak repetitive reverse voltage v rrm 650 v parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 90 a continuous (direct) forward current i f t j = t jmax t s =80c 29 a power dissipation p tot t j = t jmax t s =80c 52 w maximum junction temperature t jmax 175 c
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 3 14 aug. 2015 / revision 1 h-bridge switch lo/hi side dc capacitor h-bridge diode lo/hi side parameter symbol value unit a condition collectoremitter voltage v ces 650 v collector current i c t j = t jmax t s =80 c 43 repetitive peak collector current i crm t p limited by t jmax 150 a total power dissipation p tot t j = t jmax t s =80 c 84 w gateemitter voltage v ges 20 v maximum junction temperature t jmax 175 c parameter symbol unit maximum dc voltage v max 630 v operation temperature t op 55+125 c conditions value parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 100 a dc forward current i f t j =t j max t s =80c 40 a power dissipation p tot t j =t j max t s =80c 64 w maximum junction temperature t j max 175 c
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 4 14 aug. 2015 / revision 1 parameter symbol unit thermal properties isolation properties isolation voltage v i sol dc voltage t p =2s 4000 v creepage distance min 12,7 mm clearance 7,74 mm comparative tracking index cti >200 c c storage temperature t stg 40+125 operation junction temperature t jop 40+( t jmax 25) conditions value module properties
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 5 14 aug. 2015 / revision 1 pfc switch rectifier diode characteristic values 25 3,3 4 4,7 125 25 1,67 2,22 125 1,84 150 1,89 25 40 125 25 120 125 parameter symbol conditions value unit t j [ c] min typ max static v ge [v] v ce [v] i c [a] v collec toremitter saturation voltage v cesat 15 75 v gateemitter threshold voltage v ge(th) v ge = v ce 0,00075 a gateemitter leakage c urrent i ges 20 0 na collec toremitter c utoff current i ces 0 650 75 none input capacitance c ies f=1 mhz 0 25 internal gate resistance r g 75 25 166 nc reverse transfer capac itance c res 16 gate c harge q g 15 520 25 4300 pf output capacitance c oes 1,14 k/w thermal thermal resistance junc tion to sink r th(j-s) phasechange material ? =3,4w /mk 25 1,07 1,21 125 1,13 150 25 50 145 1100 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 25 v reverse leakage c urrent i r 1600 a forward voltage v f thermal thermal resistance junc tion to sink r th(j-s) phasec hange material ? =3,4w/mk k/w 0,82
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 6 14 aug. 2015 / revision 1 pfc diode c. t. protection diode parameter symbol unit v r [v] i f [a] t j [c] min typ max 25 1,67 1,87 125 1,56 150 25 0,14 150 thermal resistance junc tion to sink r th(j-s) phasec hange material ? =3,4w/mk 2,87 k/w conditions value static forward voltage v f 10 v reverse leakage c urrent i rm 650 a thermal 25 2,46 2,6 125 2,03 150 25 10 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 30 v reverse leakage c urrent i r 665 a forward voltage v f thermal thermal resistance junc tion to sink r th(j-s) phasec hange material ? =3,4w/mk k/w 1,83
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 7 14 aug. 2015 / revision 1 h-bridge switch lo/hi side h-bridge diode lo/hi side 25 3,3 4 4,7 125 25 1 1,82 2,22 125 2,00 150 25 40 125 25 120 125 parameter symbol conditions value unit t j [ c] min typ max static v ge [v] v ce [v] i c [a] v collec toremitter saturation voltage v cesat 15 50 v gateemitter threshold voltage v ge(th) v ge = v ce 0,0005 a gateemitter leakage c urrent i ges 20 0 na collec toremitter c utoff current i ces 0 650 50 none input capacitance c ies f=1 mhz 0 25 internal gate resistance r g 50 25 120 nc reverse transfer capac itance c res 11 gate c harge q g 15 520 25 3000 pf output capacitance c oes 1,13 k/w thermal thermal resistance junc tion to sink r th(j-s) phasechange material ? =3,4w/mk parameter symbol unit di f /dt [a/us] v r [v] i f [a] t j min typ max 25c 1,55 1,82 125c 1,50 150c 1,45 25c 0,6 150c thermal resistance chip to heatsink r thjh phase-change material =3,4w/mk 1,48 k/w conditions value static forward voltage v f 50 v reverse leakage current i rm 650 a thermal
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 8 14 aug. 2015 / revision 1 dc capacitor thermistor 100 nf capacitance c t j [c] min typ max -10 parameter symbol conditions value unit tolerance % +10 parameter symbol unit v ge [v] v ce [v] i c [a] t j [ c] min typ max conditions value mw rated resistance r deviation of r100 r/r r100=1486 25 21,5 k +4,5 % 210 100 4,5 25 k 25 3,5 mw/k 25 3884 25 3964 k power dissipation p bvalue b (25/100) bvalue b (25/50) f vincotech ntc reference power dissipation constant
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 9 14 aug. 2015 / revision 1 date code ul & vinco lot serial wwyy ul vinco lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function pin x y function 1 52,9 0 g13 30 49,8 12,9 dcinv2 2 49,9 0 s13 31 52,9 12,9 dcinv2 3 41,9 0 ph2 32 52,9 15,9 dcinv1 4 39,2 0 ph2 33 41,8 14,4 dc+inv 5 36,2 0 s14 34 39,1 14,4 dc+inv 6 33,2 0 g14 35 29,2 9,2 pfc2 7 22 0 pfc+ 36 15 9,2 pfc1 8 22 3,5 pfc+ 37 25 17,4 pfc2in2 9 13,4 0 dc+rect 38 16,5 17 pfc1in2 10 10,7 0 dc+rect 39 25 20,9 pfc2in1 11 2,7 0 dcrect 40 17 20,5 pfc1in1 12 0 0 dcrect 13 0 13 acin1 14 0 15,7 acin1 15 0 23,7 acin2 16 0 26,4 acin2 17 7,7 28,8 therm1 18 10,7 28,8 therm2 19 14,6 28,8 s25 20 17,6 28,8 g25 21 20,6 28,8 g27 22 23,6 28,8 s27 23 33,2 28,8 g12 24 36,2 28,8 s12 25 39,2 28,8 ph1 26 41,9 28,8 ph1 27 49,9 28,8 s11 28 52,9 28,8 g11 29 49,8 15,9 dcinv1 nnnnnnnnnnnnnnnnnnnnnnnn name pin table [mm] pin table [mm] in packaging barcode as ordering code & marking outline l514b08/3/ 10fy07zab050sml514b08/3/ version without thermal paste 12mm housing text datamatrix l514b08 in datamatrix as ordering code nn-nnnnnnnnnnnnnn nnnnnnnn wwyy ul vinco lllll ssss
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 10 14 aug. 2015 / revision 1 identification t25,t27 d25,d27 comment 650v 650v voltage current function 75a pfc switch 30a pfc diode pinout rectifier diode dc capacitor c1,c2 id t11, t13 / t12, t14 d31, d32, d33, d34 igbt fwd component d12, d14 / d11, d13 fwd d26, d28 fwd 650v 10a ntc ntc thermistor c.t. protection diode 50a hbridge switch lo/hi side 50a capacitor 1600v igbt 650v 630v hbridge diode lo/hi side rectifier 650v 50a
10-fy07zab050sm-l514b08 target datasheet copyright vincotech 11 14 aug. 2015 / revision 1 standard packaging quantity (spq) sample handling instruction 100 >spq standard

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